Method for forming a light emitting diode

Details Method for forming a light emitting diode Method for forming a light emitting diode

2011-08-16

2011-08-16

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S459000, C257SE21510, C257SE21513, C257SE33068, C257SE33072, C257SE33073

Reexamination Certificate

active

07998768

ABSTRACT:
A method for forming a light emitting diode includes: (a) growing epitaxially an epitaxial film over an epitaxial substrate; (b) roughening an upper surface of the epitaxial film; (c) forming a top electrode on the roughened upper surface of the epitaxial film; (d) detachably attaching a temporary substrate over the roughened upper surface of the epitaxial film; (e) roughening the lower surface of the epitaxial film; (f) disposing the roughened lower surface of the epitaxial film on a reflective top surface of an electrically conductive permanent substrate; (g) filling an optical adhesive in a gap between the roughened lower surface of the epitaxial film and the reflective top surface of the permanent substrate; and (h) after the step (g), removing the temporary substrate from the epitaxial film.

REFERENCES:
patent: 5487999 (1996-01-01), Farnworth
patent: 2006/0011923 (2006-01-01), Eisert et al.
patent: 2009/0141502 (2009-06-01), Sonoda et al.
patent: 2011/0024783 (2011-02-01), Horng et al.
patent: 2007227895 (2007-09-01), None

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