Method for forming a layer of uniform thickness on a semiconduct

Details Method for forming a layer of uniform thickness on a semiconduct Method for forming a layer of uniform thickness on a semiconduct

1993-09-08

1995-08-08

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437233, 437235, 437239, H01L 2100

Patent

active

054398509

ABSTRACT:
A ring is provided on a monocrystalline silicon wafer at one face thereof and adjacent the edge thereof. The ring increases the optical absorptivity of the wafer adjacent the ring compared to the optical absorptivity of the wafer distant from the ring. The ring therefore at least partially compensates for edge cooling of the wafer during rapid thermal processing thereof. Uniform thickness layers can therefore be deposited on a wafer in a rapid thermal processing system. When depositing polycrystalline silicon on an oxide covered layer, the ring may be formed as a circular trench in the oxide layer adjacent the wafer edge.

REFERENCES:
patent: 4560420 (1985-12-01), Lord
patent: 4877573 (1989-08-01), Nilsson
patent: 5155337 (1992-08-01), Serrell et al.
patent: 5212394 (1993-05-01), Iwasaki et al.
patent: 5317186 (1994-05-01), Wills et al.

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