Method for forming a lateral bipolar transistor with dual collec

Details Method for forming a lateral bipolar transistor with dual collec Method for forming a lateral bipolar transistor with dual collec

1994-07-15

1995-02-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437150, 437154, 437917, 148DIG96, H01L 21265

Patent

active

053875532

ABSTRACT:
A lateral PNP bipolar transistor includes concentric circular emitter and annular base and dual collector regions. The inner collector region is moderately doped to provide good punch-through and Early voltage performance. The outer collector region is highly doped to provide low collector series resistance. A composite transistor made up of any desired number of individual transistors provides a transistor having a desired current capacity. The transistor annular base cross-section permits very accurate base width control during the manufacturing process.

REFERENCES:
patent: 3766446 (1973-10-01), Tarui et al.
patent: 4263066 (1981-04-01), Kolmann
patent: 4319257 (1982-03-01), Beasom
patent: 4966858 (1990-10-01), Masquelier et al.
patent: 5064774 (1991-11-01), Pfiester
patent: 5208169 (1993-05-01), Shah et al.

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