Method for forming a lateral bipolar transistor

Details Method for forming a lateral bipolar transistor Method for forming a lateral bipolar transistor

1996-06-13

1997-04-29

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Forming lateral transistor structure

438366, 438204, H01L 21265

Patent

active

056248563

ABSTRACT:
A lateral bipolar transistor comprising a self-aligned polysilicon base contact, and polysilicon emitter and collector contacts is provided. The self-aligned base contact significantly reduces the base width and therefore the base resistance compared with conventional lateral bipolar transistors, thus improving f.sub.t and f.sub.max. The polysilicon emitter and collector contacts improve the emitter efficiency and current gain, and allows for more flexible contact placement. The process is compatible with conventional double-poly bipolar processes.

REFERENCES:
patent: 4546536 (1985-10-01), Anantha et al.
patent: 5086005 (1992-02-01), Hirakawa
patent: 5387553 (1995-02-01), Moksvold et al.
patent: 5486481 (1996-01-01), Sundaram

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