Method for forming a hole in a semiconductor device

Details Method for forming a hole in a semiconductor device Method for forming a hole in a semiconductor device

1997-02-04

1999-03-16

Chapman, Mark

Etching a substrate: processes

Forming or treating electrical conductor article

Forming or treating of groove or through hole

216 39, 216 67, 438695, 438696, 438710, H01L 2100

Patent

active

058825355

ABSTRACT:
Processes for forming pedestal holes in a substrate assembly are described. In particular, processes using a high density plasma to etch doped or undoped silicon oxide are described. For example, a fluorocarbon chemistry is employed for selective deposition of a spacer layer to form a vertical to less than vertical spacer within a contact hole. The contact hole is extended using the spacer and a subsequent etch to complete formation of a via. Alternatively, both spacer deposition and contact hole formation may be achieved in a single etch step.

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