Method for forming a heteroepitaxial structure, and a device man

Details Method for forming a heteroepitaxial structure, and a device man Method for forming a heteroepitaxial structure, and a device man

1989-06-15

1990-08-28

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 50, H01S 319

Patent

active

049531700

ABSTRACT:
Described is a method for forming epitaxial films comprising successive layers of at least ternary and at least quaternary III-V material grown by metalorganic vapor-phase epitaxy. Between the steps of growing successive layers, the growth chamber is first flushed, advantageously in successive steps using a pair of gaseous Group V hybrides, a few monolayers of binary III-V material are then deposited, and then the growth chamber is again flushed. As a result, interfaces are sharper and interfacial defects are reduced. Also described are quantum well lasers made according to the inventive method.

REFERENCES:
patent: 3982207 (1976-09-01), Dingle et al.
patent: 4599728 (1986-07-01), Alavi et al.

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