Method for forming a hard mask of half critical dimension

Details Method for forming a hard mask of half critical dimension Method for forming a hard mask of half critical dimension

1999-04-28

2000-08-29

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

423734, 423738, 423743, 423717, H01L 2100

Patent

active

061108375

ABSTRACT:
The present invention discloses a method for forming hard mask of half critical dimension on a substrate. A substrate is provided for the base of integrated circuits. A silicon oxide layer is formed on the substrate. A photoresist layer is formed on the silicon oxide layer and it is has a critical dimension, which the conventional lithography process can make. Subsequently, a hard mask of half critical dimension is formed in the silicon oxide layer by using the photoresist layer as an etching mask. After the oxide hard mask is formed, the gate structure of half critical dimension is formed by using the oxide hard mask.

REFERENCES:
patent: 5296410 (1994-03-01), Yang
patent: 5776836 (1998-07-01), Sandhu
patent: 5902133 (1999-05-01), Linliu
patent: 5916821 (1999-06-01), Kerber
patent: 5965461 (1999-10-01), Yang et al.
patent: 6020269 (2000-02-01), Wang et al.

Affiliated with

Also associated with

Rating

Method for forming a hard mask of half critical dimension does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a hard mask of half critical dimension, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a hard mask of half critical dimension will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1249545