Method for forming a GexSi1-x buffer layer of solar-energy...

Details Method for forming a GexSi1-x buffer layer of solar-energy... Method for forming a GexSi1-x buffer layer of solar-energy...

2009-08-04

2011-10-11

Lebentritt, Michael (Department: 2829)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S057000, C257SE27123, C257SE27124, C257SE27125

Reexamination Certificate

active

08034654

ABSTRACT:
The method is disclosed that Si+is implanted on Si substrate to enhance strain relaxation at the interface between the metamorphic GexSi1−xbuffer layers and Si substrate, in order to facilitate the growth of a high quality Ge on Si substrate. And several GexSi1−xbuffer layers (Si/Ge0.8Si0.2/Ge0.9Si0.1/Ge) are grown on top of Si substrate by UHVCVD. Then grow pure Ge layer of low dislocation density on GexSi1−xbuffer layer. Finally, grow up high efficiency III-V solar cell on GexSi1−xbuffer layer.

REFERENCES:
patent: 2008/0314444 (2008-12-01), Kawaguchi
patent: 2010/0006143 (2010-01-01), Welser
Hsieh et al., “Use of Si+ pre-ion-implantation on Si substrate to enhance the strain relaxation of the GexSi1-x metamorphic buffer layer for the growth of Ge layer on Si substrate”, Applied Physics Letters 90, Feb. 2007, pp. 083507-1 to 083507-3.

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