Method for forming a germanium layer and a heterojunction bipola

Details Method for forming a germanium layer and a heterojunction bipola Method for forming a germanium layer and a heterojunction bipola

1989-12-27

1992-02-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 32, 437131, 437234, 437239, 148DIG11, 148DIG59, H01L 2120, H01L 21328

Patent

active

050894285

ABSTRACT:
A method for preparing a germanium layer (22) adjacent to a germanium silicon layer (20). Initially, a P-germanium silicon layer (16) is deposited on to an N-germanium silicon layer (14). The continuous germanium layer (22) is formed by heating the layers (14 and 16) in a steam oxidation step to approximately 1000 degrees Centigrade to transform the P-germanium silicon layer (16) into the P-germanium layer (18) and a SiO.sub.2 layer (22). A method for forming a heterojunction bipolar transistor utilizing a P-germanium layer (50) is also disclosed.

REFERENCES:
patent: 3725161 (1973-04-01), Kuper
patent: 4891329 (1990-01-01), Reisman et al.
patent: 4920076 (1990-04-01), Holland et al.
patent: 4975387 (1990-12-01), Prokes et al.

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