Method for forming a gate structure used in borderless contact e

Details Method for forming a gate structure used in borderless contact e Method for forming a gate structure used in borderless contact e

1997-10-27

1999-10-12

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438724, 438738, 438744, H01L 2100

Patent

active

059654627

ABSTRACT:
A method for forming a gate structure used in borderless contact etching is disclosed including the steps described below. Forming a conductive layer on a substrate, followed by forming a first silicon nitride layer on the conductive layer. The next step is to pattern a gate electrode by etching all the layers formed in the steps mentioned previously. The following steps is to form a second silicon nitride layer on the surface of the gate electrode and the substrate. Finally, etching the second silicon nitride layer to form a nitride spacer on the side walls of the gate electrode. The altitude of the nitride spacer is higher than the altitude of the first silicon nitride layer.

REFERENCES:
patent: 5753565 (1998-05-01), Becker
patent: 5756216 (1998-05-01), Becker et al.
patent: 5851927 (1998-12-01), Cox et al.

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