Method for forming a gate electrode having a polycide structure

Details Method for forming a gate electrode having a polycide structure Method for forming a gate electrode having a polycide structure

1994-05-13

1995-04-18

Quach, T. N.

Fishing, trapping, and vermin destroying

437 29, 437 35, 437 41, 437200, H01L 21336

Patent

active

054078482

ABSTRACT:
A method for forming a gate electrode is disclosed. A first thermal oxide film is formed on a silicon substrate. A portion of the first thermal oxide film and the substrate is removed by the photolithography method. An impurity is implanted on the substrate after a second thermal oxide film is formed on the entire surface of the resulting structure. The first thermal oxide film and the second oxide film is removed and then a gate oxide film is formed on the entire surface of the resulting structure. A doped polysilicon film and a silicide film is formed on the gate oxide film and then a desired gate electrode is formed by the photolithography method. A third thermal oxide film is formed on the surface of the resulting structure and then second impurity regions are formed on the substrate.

REFERENCES:
patent: 5089432 (1992-02-01), Yoo et al.
patent: 5147814 (1992-09-01), Takeuchi
patent: 5262337 (1993-11-01), Kim

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