Method for forming a GaN-based semiconductor light emitting devi

Details Method for forming a GaN-based semiconductor light emitting devi Method for forming a GaN-based semiconductor light emitting devi

1998-12-01

2000-11-14

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

117952, H01L 2100

Patent

active

061469165

ABSTRACT:
A method for forming a GaN-based semiconductor layer includes the steps of: forming a ZnO buffer layer on one of a glass substrate and a silicon substrate; and epitaxially growing a GaN-based semiconductor layer on the ZnO buffer layer by using an electron cyclotron resonance--molecular beam epitaxy (ECR-MBE) method.

REFERENCES:
Lei, T., et al. "Epitaxial growth and characterization of zincblende gallium nitride on (001) silicon" J. Appl. Phys 71 (10), May 15, 1992.

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