Method for forming a functional deposited film by bias sputterin

Details Method for forming a functional deposited film by bias sputterin Method for forming a functional deposited film by bias sputterin

1994-12-22

1996-04-23

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

20419225, 20429806, 20429808, 437108, 437109, C23C 1434

Patent

active

055100112

ABSTRACT:
In a bias sputtering method comprising generating a plasma of a sputtering gas between a target electrode having a target thereon and a substrate electrode having a substrate for film formation thereon in a vacuum vessel with the use of a high frequency energy from a high frequency power source and sputtering said target with said plasma while applying a direct current voltage from a direct current power source to at least one of said target electrode or said substrate electrode thereby causing the formation of a film on said substrate, the improvement which comprises alternately repeating a deposition step and a non-deposition step, said deposition step comprising sputtering said target with said plasma while irradiating said substrate with ions of said plasma while depositing a film on said substrate, and said non-deposition step comprising irradiating said substrate with ions of said plasma without sputtering said target, thereby forming a high quality functional deposited film on said substrate.

REFERENCES:
patent: 4874494 (1989-10-01), Ohmi
patent: 4963239 (1990-10-01), Shimamura et al.
patent: 4999096 (1991-03-01), Nihei et al.
patent: 5194398 (1993-03-01), Miyachi et al.
patent: 5242561 (1993-09-01), Sato

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