Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2006-12-12
2006-12-12
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C257SE21568
Reexamination Certificate
active
07148124
ABSTRACT:
Process for forming a fragile layer inside of a single crystalline substrate near one of the substrate surfaces. The fragile layer is created by collecting hydrogen in high concentration at a desired depth. The hydrogen layer is collected on a seed layer. The seed layer is formed by ion implantation of non-doping species and annealing. The implantation introduces defects that are capable to trap hydrogen, and annealing confines the seed layer making it flat and thin. Then protium hydrogen ions are implanted at elevated temperature. The protium implantation depth is bigger than the depth of the seed layer. The implanted protium moves to the seed layer and trap there. The process is useful for making silicon-on-insulator (SOI) wafers. SOI with an ultrathin superficial silicon layer of high quality can be obtained. Hydrogen can be implanted at high dose rate, and thus the SOI wafers can be manufactured with high throughput and low cost. SOI wafers also have high quality as superficial silicon does not contain microvoids.
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