Method for forming a fluorinated nitrogen containing dielectric

Details Method for forming a fluorinated nitrogen containing dielectric Method for forming a fluorinated nitrogen containing dielectric

1994-10-03

1996-11-05

Fourson, George

Fishing, trapping, and vermin destroying

437242, 437983, 437240, H01L 21225, H01L 213115

Patent

active

055717349

ABSTRACT:
This disclosure reveals a manufacturable and controllable method to fabricate a dielectric which increases the device current drive. A nitrogen-containing ambient is used to oxidize a surface of a substrate (10) to form a nitrogen-containing dielectric (12). Then a fluorine-containing specie (F) is introduced, preferably through implanting, into a gate electrode (20) overlying the nitrogen-containing dielectric. The fluorine is then driven into the underlying nitrogen-containing dielectric. A fluorinated nitrogen-containing region (14') is expected to form at the interface between dielectric (12') and substrate (10). The interaction between fluorine and nitrogen increases the peak transconductance as well as the transconductance at a high electric field for the dielectric. Therefore, the overall current drive is increased by this approach.

REFERENCES:
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patent: 5264396 (1993-11-01), Thakur et al.
patent: 5382533 (1995-01-01), Ahmad et al.
"Improvement in SiO2 Gate Dielectrics with Fluorine Incorporation", Wright et al.
"Improvements in Rapid Thermal Oxide/Re-Oxidized Nitrided Oxide (ONO) Films Using NF3", Cable et al, Mat. Res. Soc. Symp. Proc. vol. 224, 1991.
"Very Lightly Nitrided Oxide Gate Mosfets For Deep-Sub-Micron CMOS Devices", Momose et al, IEEE 1991.
"Improvement of the SiO2/Si Interface of Metal-Oxide-Semiconductor Devices Using Gate Dielectrics Formed by NF3-Aided Oxidation and N20 Post-Anealing", Huang, J.Appl.Phys. 75(5), 1 Mar. '94.

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