Method for forming a fine resist pattern

Details Method for forming a fine resist pattern Method for forming a fine resist pattern

1994-05-12

1996-01-02

Powell, William

Etching a substrate: processes

Forming or treating mask used for its nonetching function

216 24, 216 41, B44C 122

Patent

active

054800471

ABSTRACT:
A method for forming a fine resist pattern by exposing comprising the steps of: (i) forming a resist layer on a semiconductor substrate; (ii) forming a phase shifting pattern in an upper portion of the resist layer, the phase-sifting pattern having a tapered edge corresponding to a portion to which formation of an objective fine resist pattern is not desired; (iii) exposing the entire surface of the semiconductor substrate including the phase-shifting pattern; and (iv) forming a fine resist pattern below an outline except for the tapered edge of the phase-shifting pattern.

REFERENCES:
patent: 5024726 (1991-06-01), Fujiwara
patent: 5221429 (1993-06-01), Makuta
patent: 5278028 (1994-01-01), Hadimioglu et al.
patent: 5330862 (1994-07-01), Tabuchi et al.

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