Method for forming a fine pattern of a semiconductor device

Details Method for forming a fine pattern of a semiconductor device Method for forming a fine pattern of a semiconductor device

2011-06-14

2011-06-14

Culbert, Roberts (Department: 1716)

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

Masking of sidewall

C216S041000, C438S696000

Reexamination Certificate

active

07959818

ABSTRACT:
A method for forming a fine pattern of a semiconductor device includes forming a photoresist pattern over a semiconductor substrate including an underlying layer. A cross-linking layer is formed on the sidewall of the photoresist pattern. The photoresist pattern is then removed to form a fine pattern comprising the cross-linking layer. The underlying layer is etched using the fine pattern as an etching mask. As a result, the underlying layer has a smaller size than a minimum pitch.

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