Method for forming a fine pattern by using a patterned resist la

Details Method for forming a fine pattern by using a patterned resist la Method for forming a fine pattern by using a patterned resist la

1991-01-09

1992-12-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437935, 437944, 148DIG100, 148DIG131, 148DIG137, H01L 21312

Patent

active

051717182

ABSTRACT:
A fine pattern formation using an electron beam induced resist, and use of the resist in making semiconductor devices are disclosed. Collimated electron beam is irradiated and scanned along a desired pattern on a layer on which a resist layer of a desired pattern is deposited under an atmosphere containing a starting material layer for the resist. The resist thus deposited is partially removed by reactive ion etching to remove the skirt like portion of the resist layer, or totally removed by reactive ion etching during or after processing by using the resist layer as a processing mask. Since the resist layer width is determined by a diameter of the collimated electron beam, line width of less than hundred .ANG. can be directly drawn. There are also disclosed processes using the resist layer in manufacturing semiconductor devices.

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Translation of DE 30 15 034 A1-Fritzsche.
A. N. Broers et al., "Electron-beam Fabrication of 80 .ANG. Metal Structures" Applied Physics Letters, vol. 29, No. 9, Nov. 1976 pp. 596-598.
Morrissey et al., Electron-Beam Contamination as a Mask, IBM Technical Disclosure Bulletin, vol. 20, No. 6, Nov., 1977, p. 2212.
Manufacture of Semiconductor Device, Patent Abstracts of Japan, vol. 10, No. 150 (E-408) [2207], May 31, 1986.

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