Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2011-06-21
2011-06-21
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S482000
Reexamination Certificate
active
07964438
ABSTRACT:
A method is described of forming a film of an amorphous material on a substrate by deposition from a plasma. The substrate is placed in an enclosure, a film precursor gas is introduced into the enclosure, and unreacted and dissociated gas is extracted from the enclosure so as to provide a low pressure therein. Microwave energy is introduced into the gas within the enclosure to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The said flow rate of the film precursor gas is altered during the course of deposition of material, so as to cause the bandgap to vary over the thickness of the deposited material.
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Bulkin Pavel
Daineka Dmitri
Descamps Pierre
Kervyn De Meerendre Thibault
Leempoel Patrick
Dow Corning Corporation
Ecole Polytechnique
Garber Charles D
Leason Ellis LLP
Patel Reema
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