Method for forming a film on a substrate by activating a reactiv

Coating processes – Coating by vapor – gas – or smoke

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4272551, 4272552, 427572, 427573, 427574, 427575, 427569, 427570, 427596, 437 67, 437919, 148DIG50, C23C 1600, B05D 306

Patent

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054589193

ABSTRACT:
A thin film forming method which comprises the steps of supporting a substrate to be treated, having a trench or an unevenness thereon, in a reaction vessel; introducing a reactive gas into the reaction vessel; activating the reactive gas to form a deposit species, the deposit species characterized by a phase diagram including a liquid phase region defined by a melting curve and an evaporation curve that intersect at a triple point; and forming a thin film containing at least a part of the deposit species on the substrate while retaining a pressure in the reaction vessel higher than the triple point of the phase diagram of the deposit species, and retaining a temperature of the substrate within the liquid phase region of the phase diagram of the deposit species.

REFERENCES:
patent: 4009680 (1977-03-01), Fengler
patent: 4501225 (1985-02-01), Nagao et al.
patent: 4645564 (1987-02-01), Morie et al.
patent: 4673592 (1987-06-01), Porter et al.
patent: 4675205 (1987-06-01), Boncoeur et al.
patent: 4743570 (1988-05-01), Lamont, Jr.
patent: 4747928 (1988-05-01), Takahashi et al.
patent: 4800174 (1989-01-01), Ishihara et al.
Patent Abstracts of Japan, vol. 15, No. 40, to Japanese Patent Document No. 02-277238 dated Jan. 30, 1991.
S. Noguchi, H. Okano and Y. Horiike, "Liquid Phase Oxidation Employing O Atoms Produced by Microwave Discharge and Si(CH.sub.3).sub.4 ", Extended Abstracts of the 19th Conf. on Solid State Devices and Materials, pp. 451-454, 1987.
J. Sato and K. Maeda, "Very Low Temperature CVD of SiO.sub.2 Films Using Ozone and Organosilane", Extended Abstracts of Dielectrics and Insulation Division of the Electrochemical Society, pp. 31-33, 1971.

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