Fishing – trapping – and vermin destroying
Patent
1993-02-09
1996-01-02
Thomas, Tom
Fishing, trapping, and vermin destroying
437233, 437236, 437913, 437132, 148DIG150, 148DIG169, H01L 2186
Patent
active
054808189
ABSTRACT:
A crystal silicon film deposited on an insulating film made of a binary system material or a binary system semiconductor film formed by an atomic layer deposition method has a grain as large as approximately 200 nm. Thus, the mobility of carriers is increased. The crystal silicon thereof is grown within a temperature range of 250.degree. C. to 400.degree. C. Accordingly, when a planar type thin film transistor, an inverted stagger type thin film transistor or a stagger type thin film transistor is formed using crystal silicon formed on these films made of a binary system material, transistor characteristics thereof are improved. Further, when an impurity containing silicon film is formed by a chemical vapor deposition method between a source electrode and a drain electrode of a thin film transistor and a silicon film connected to these electrodes, and a flow rate of impurity containing gas is regulated so that impurity density becomes larger as approaching to the source electrode and the drain electrode, a leakage current in an OFF-state of the transistor is reduced. Since the impurity containing silicon film is grown by a chemical vapor deposition method in this case, the impurity density thereof can be controlled easily and the control accuracy is also improved.
REFERENCES:
patent: 4413022 (1983-11-01), Suntola et al.
patent: 4418118 (1983-11-01), Lindors
patent: 4486487 (1984-12-01), Skarp
patent: 4952446 (1990-08-01), Lee et al.
patent: 5130263 (1992-07-01), Possin et al.
Wolf et al, "Silicon Processing for the VLSI ERA". vol. 1, pp. 175-176, 1986.
"Low-Temperature Fabrication of High-Mobility Poly-Si TFT's for Large-Area LCD's", T. Serikawa et al., IEEE Transactions on Electron Devices, vol. 36, No. 9, Sep. 1989, pp. 1929-1933.
Hodate Mari
Ichimura Teruhiko
Inoue Jun
Matsumoto Tomotaka
Murata Yuji
Fujitsu Limited
Thomas Tom
Trinh Michael
LandOfFree
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