Method for forming a field emission device

Details Method for forming a field emission device Method for forming a field emission device

1990-09-27

1992-08-11

Kunemund, Robert

Metal working

Barrier layer or semiconductor device making

201 2502, 437225, 437228, B23B 528, H01L 21302

Patent

active

051367645

ABSTRACT:
A method for forming a field emission device. The method includes steps which utilize sidewall spacer formation techniques. The sidewall spacer(s) are employed to properly orient the various conductive elements of the field emission device.

REFERENCES:
patent: 3755704 (1973-08-01), Spindt et al.
patent: 3789471 (1974-02-01), Spindt et al.
patent: 3812559 (1974-05-01), Spindt et al.
patent: 3894332 (1975-07-01), Nathanson et al.
patent: 3921022 (1975-11-01), Levine
patent: 3970887 (1976-07-01), Smith et al.
patent: 3998678 (1976-12-01), Fukase et al.
patent: 4008412 (1977-02-01), Yuito et al.
patent: 4178531 (1979-12-01), Alig
patent: 4307507 (1981-12-01), Gray et al.
patent: 4498952 (1985-02-01), Christensen
patent: 4513308 (1985-04-01), Greene et al.
patent: 4578614 (1986-03-01), Gray et al.
patent: 4685996 (1987-08-01), Busta et al.
patent: 4721885 (1988-01-01), Brodie
patent: 4827177 (1989-05-01), Lee et al.
patent: 4874981 (1989-10-01), Spindt
patent: 4889821 (1989-12-01), Selle et al.
patent: 4901028 (1990-02-01), Gray et al.
patent: 4916083 (1990-04-01), Monkowski et al.
patent: 4956574 (1990-09-01), Kane
A Vacuum Field Effect Transistor Using Silicon Field Emitter Arrays, by Gray, 1986 IEDM.
Advanced Technology: flat cold-cathode CRTs, by Ivor Brodie, Information Display Jan. 1989.
Field-Emitter Arrays Applied to Vacuum Flourescent Display, by Spindt et al., Jan., 1989 issue of IEEE Transactions on Electronic Devices.
Field Emission Cathode Array Development For High-Current Density Applications by Spindt et al., dated Aug., 1982 vol. 16 of Applications of Surface Science.

Affiliated with

Also associated with

Rating

Method for forming a field emission device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a field emission device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a field emission device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-339036