Method for forming a ferroelectric material film by the sol-gel

Details Method for forming a ferroelectric material film by the sol-gel Method for forming a ferroelectric material film by the sol-gel

1997-03-03

1998-11-24

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438781, 438785, 4274195, H01L 218242

Patent

active

058406158

ABSTRACT:
A method for forming a ferroelectric material film, more particularly a lead zirconate titanate (PZT) film by the sol-gel method wherein a lowered oxidative sintering temperature may be adopted in preparing the ferroelectric material film with a perovskite crystalline structure, thereby reducing the risk of oxidation of metal electrodes and other circuits when the ferroelectric material film is employed as a dielectric in semiconductor devices, such as in a capacitor, for example. The method contemplates the preparation of a raw material solution containing an organometallic compound of a metallic element forming the ferroelectric material film, alkanolamine and/or stabilizer comprising a .beta.-diketone, with the concentration of the stabilizer being sufficient to provide a mole ratio to the total metal atoms of (stabilizer/total metal atoms)>3. The method then involves coating the raw material solution, drying the coated raw material solution to form a dried film, and sintering the dried film to form the ferroelectric material film wherein the oxidative sintering is carried out at a relatively low temperature of about 450.degree. C. in forming the ferroelectric material film with a perovskite crystalline structure.

REFERENCES:
patent: 4937208 (1990-06-01), Yamamoto
patent: 4960618 (1990-10-01), Tanisu et al.
patent: 4963390 (1990-10-01), Lipeles et al.
patent: 5122477 (1992-06-01), Wolters et al.
patent: 5244691 (1993-09-01), Valente et al.
patent: 5391393 (1995-02-01), Maniar
N. Tohge, et al., J. Am. Ceram. Soc., 74(1) (1991) 67, "Preparation of PbZrO3-PbTiO3 Ferroelectric Thin Films by the Sol-Gel Process".
Translation of JP 3-83817, Apr. 1991.
Miyazawa et al., "Microstructural Characterization of Gel-Derived Thin Films" Ceram. Trans. (1993) 30 (Nucleation & Crystallization in Liquids) pp. 331-334.

Affiliated with

Also associated with

Rating

Method for forming a ferroelectric material film by the sol-gel does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a ferroelectric material film by the sol-gel , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a ferroelectric material film by the sol-gel will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1701556