Method for forming a DRAM memory cell with tapered capacitor ele

Details Method for forming a DRAM memory cell with tapered capacitor ele Method for forming a DRAM memory cell with tapered capacitor ele

1991-07-10

1994-10-11

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 60, 437233, 437235, 437947, 437986, 156644, H01L 2170

Patent

active

053547160

ABSTRACT:
A DRAM cell structure having a capacitance electrode with a tapered end surface is disclosed. Accordingly, the cell structure of this invention provides increased yield without increasing the number of process steps required to form the cell structure, A unique process for forming the capacitance electrode with a tapered end surface is also provided.

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"Multi-Step Etching of Dissimilar Materials Achieving Selectivity and Slope Control," published in IBM Technical Disclosure Bulletin, vol. 28, No. 7, Dec., 1983.

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