Method for forming a doped ZnSe single crystal

Details Method for forming a doped ZnSe single crystal Method for forming a doped ZnSe single crystal

1991-04-15

1992-12-08

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437167, 437247, 437165, 156603, 156606, 156DIG72, 156DIG77, H01L 2120

Patent

active

051697998

ABSTRACT:
A method of forming a ZnSe single crystal. The method includes placing a piece of ZnSe polycrystal in a sealed reactor tube with its atmosphere formed of certain gases. The reactor tube is moved through different temperature zones to convert the polycrystal to a single crystal. The single crystal thus formed is cut to produce a single crystal chip or wafer. An impurity is then implanted in the chip or wafer. Lastly the chip or wafer is heated to diffuse the impurity throughout the chip or wafer.

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S. Wolf and R. N. Tauber, Silicon Processing for the VLSI Era vol. 1: Process Technology, pp. 242-245, section on the "Mathematics of Diffusion" Lattice Press, Sunset Beach, Calif. (1986).
Patent Abstracts of Japan, "N-Form Diffusion Method of ZnSe", Apr. 25, 1987, Patent 270300.

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