Method for forming a dielectric layer on a high temperature meta

Details Method for forming a dielectric layer on a high temperature meta Method for forming a dielectric layer on a high temperature meta

1994-02-02

1995-04-18

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 43, 437192, 437195, 437228, H01L 21302

Patent

active

054078660

ABSTRACT:
A method for forming a dielectric layer (16) on a high temperature metal layer (14) is provided. By processing the high temperature metal layer (14) with a non-oxidizing photoresist stripper and absent a photoresist hardening step, adhesion between the high temperature metal layer (14) and a dielectric layer (16) subsequently formed on the high temperature metal layer (14) is significantly improved. The dielectric layer (16) will adhere to the high temperature metal layer (14) in high temperature environments. The method is suitable for forming multi-layer metallization and buried layer structures for semiconductor integrated circuits.

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