Method for forming a deposition film

Details Method for forming a deposition film Method for forming a deposition film

1984-11-02

1985-10-08

Pianalto, Bernard D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 86, B05D 306

Patent

active

045460086

ABSTRACT:
A method for forming a deposition film comprises applying an excitation energy to a silane compound (SiOA) in a gaseous state having at least one substituent (OA) of the formula of --OC.sub.a H.sub.b X.sub.c where b+c=2a+1, a is a positive integer, b and c are zero or a positive integer, provided that b and c are not simultaneously zero and X is halogen atom to form a deposition film containing silicon atom on a substrate.
A method for forming a deposition film comprises applying an excitation energy to a silane compound (SiA) in a gaseous state having 2-6 silicon atoms, having at least one substituent (A) of the formula of --C.sub.a H.sub.b X.sub.c where b+c=2a+1, a is a positive integer, b and c are zero or a positive integer, and X is halogen atom, containing at least one species selected from hydrogen atom and halogen atom, and further at least one of the silicon atoms present at the both ends bonding to only one species selected from hydrogen atom and halogen atom except for bonding to another silicon atom, to form a deposition film containing silicon atom on a substrate.

REFERENCES:
patent: 4260647 (1981-04-01), Wang

Affiliated with

Also associated with

Rating

Method for forming a deposition film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a deposition film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a deposition film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2219305