Method for forming a deposited film containing IN or SN

Details Method for forming a deposited film containing IN or SN Method for forming a deposited film containing IN or SN

1989-01-17

1989-09-12

Childs, Sadie

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

4271263, 427162, 427255, C23C 1640

Patent

active

048658839

ABSTRACT:
A method for forming a deposited film comprises introducing a gaseous starting material containing In atoms or Sn atoms for formation of a deposited film, a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material and an oxygen-containing gaseous compound into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors containing a presursor under excited state, and forming a deposited film on a substrate existing in a film forming space with the use of at least one precursor of these precursors as a feeding source for a constituent element of the deposited film.

REFERENCES:
patent: Re31708 (1984-10-01), Gordon
patent: 2552626 (1951-05-01), Fisher et al.
patent: 3083550 (1963-04-01), Auerbach
patent: 3188230 (1965-06-01), Bakish et al.
patent: 3203827 (1965-08-01), Hill
patent: 3218204 (1965-11-01), Ruehrwein
patent: 3224912 (1965-12-01), Ruehrwein
patent: 3306768 (1967-02-01), Peterson
patent: 3466191 (1969-09-01), Stinchfield et al.
patent: 3506556 (1970-04-01), Gillery et al.
patent: 3655429 (1972-04-01), Deklerk
patent: 3664866 (1972-05-01), Manasevit
patent: 3850679 (1974-11-01), Sopko et al.
patent: 3870558 (1975-03-01), Shimizu et al.
patent: 3984587 (1976-10-01), Lipp
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4146657 (1979-03-01), Gordon
patent: 4180596 (1979-12-01), Crowder et al.
patent: 4206252 (1980-06-01), Gordon
patent: 4239811 (1980-12-01), Kemlage
patent: 4328261 (1982-05-01), Heinecke et al.
patent: 4357179 (1982-11-01), Adams et al.
patent: 4359490 (1982-11-01), Lehrer
patent: 4402762 (1983-09-01), John et al.
patent: 4416217 (1983-11-01), Nakamura et al.
patent: 4448801 (1984-05-01), Fukuda et al.
patent: 4515107 (1985-05-01), Fournier et al.
patent: 4522663 (1985-06-01), Ovshinsky et al.
patent: 4526809 (1985-07-01), Hall et al.
patent: 4529679 (1985-07-01), Ogawa et al.
patent: 4554180 (1985-11-01), Hirooka
patent: 4595601 (1986-06-01), Horioka et al.
patent: 4615905 (1986-10-01), Ovshinsky
patent: 4637938 (1987-01-01), Lee et al.
patent: 4650539 (1987-03-01), Irvine et al.
patent: 4652463 (1987-03-01), Peter

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