Coating apparatus – Gas or vapor deposition – With treating means
Patent
1997-12-12
2000-12-12
Ahmad, Nasser
Coating apparatus
Gas or vapor deposition
With treating means
118723MP, 118723MW, 118723VE, 156345P, 156345C, 20429838, C23C 1600
Patent
active
061583820
ABSTRACT:
A film-forming method by a plasma CVD process, comprising introducing a raw material gas into a reaction chamber containing a substrate positioned therein through a plurality of gas ejecting holes provided at a gas feed pipe and introducing a discharging energy into said reaction chamber to excite and decompose said film-forming raw material gas introduced into said reaction chamber whereby causing the formation of a deposited film on said substrate, characterized in that the introduction of said film-forming raw material gas into said reaction chamber is conducted by ejecting the film-forming raw material gas toward a member opposed to the substrate from each of right and left sides of the gas feed pipe through the gas ejecting holes of the gas feed pipe at a gas-ejecting angle (a) of 45.degree..ltoreq.(a)<90.degree. to a line which is passing through between said cylindrical substrate and each of said plurality of gas feed pipes.
REFERENCES:
patent: 5129359 (1992-07-01), Takei et al.
patent: 5232507 (1993-08-01), Ohtoshi et al.
patent: 5582648 (1996-12-01), Katagiri et al.
Katagiri Hiroyuki
Segi Yoshio
Takai Yasuyoshi
Ahmad Nasser
Canon Kabushiki Kaisha
LandOfFree
Method for forming a deposited film by plasma chemical vapor dep does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming a deposited film by plasma chemical vapor dep, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a deposited film by plasma chemical vapor dep will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-206752