Coating processes – Electrical product produced – Fluorescent or phosphorescent base coating
Patent
1986-10-21
1989-03-14
Childs, Sadie
Coating processes
Electrical product produced
Fluorescent or phosphorescent base coating
427 70, 427255, 4272553, 437225, 437233, 437234, B05D 506, B05D 512, C23C 1600
Patent
active
048123250
ABSTRACT:
A method for forming a deposited film comprises introducing into a reaction space containing a substrate (a) a gaseous starting material for the formation of a deposited film, (b) a gaseous oxidizing agent, and optionally (c) a gaseous material containing a valence electron controller component; effecting chemical contact therebetween to form a plurality of precursors including precursors in an excited state; and forming a deposited film on the substrate with at least one of the precursors.
REFERENCES:
patent: Re31708 (1984-10-01), Gordon
patent: 3306768 (1967-02-01), Peterson
patent: 3473978 (1969-10-01), Jackson et al.
patent: 3888705 (1975-06-01), Fletcher et al.
patent: 3984587 (1976-10-01), Lipp
patent: 4146657 (1979-03-01), Gordon
patent: 4239811 (1980-12-01), Kemlage
patent: 4357179 (1982-11-01), Adams et al.
patent: 4402762 (1983-09-01), John et al.
patent: 4421592 (1983-12-01), Shaskus et al.
patent: 4448801 (1984-05-01), Fukuda et al.
patent: 4462847 (1984-07-01), Thompson et al.
patent: 4504518 (1985-03-01), Ovshinsky et al.
patent: 4522663 (1985-06-01), Ovshinsky et al.
patent: 4532199 (1985-07-01), Ueno et al.
patent: 4554180 (1985-11-01), Hirooka
patent: 4615905 (1986-10-01), Ovshinsky et al.
patent: 4624736 (1986-11-01), Gee et al.
patent: 4624906 (1986-11-01), Kawamura et al.
patent: 4637938 (1987-01-01), Lee et al.
patent: 4645689 (1987-02-01), Cox
patent: 4652463 (1987-03-01), Peters
patent: 4657777 (1987-04-01), Hirooka
patent: 4689093 (1987-08-01), Ishihara et al.
Ohnishi et al., Proceedings, 6th E.C. Photovoltaic Solar Energy Conference, London, Apr. 15-19, 1985.
Sakai et al., Proceedings, 6th E.C. Photovoltaic Solar Energy Conference, London, Apr. 15-19, 1985.
Brodsky et al., 22 IBM Technical Disclosure Bulletin 3391 (Jan. 1980).
Inoue, Appl. Phys. Lett. 43(8), Oct. 15, 83, p. 774.
Hanna Jun-ichi
Ishihara Shunichi
Shimizu Isamu
Canon Kabushiki Kaisha
Childs Sadie
LandOfFree
Method for forming a deposited film does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming a deposited film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a deposited film will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-892959