Photocopying – Projection printing and copying cameras – Methods
Patent
1998-09-29
2000-07-25
Metjahic, Safet
Photocopying
Projection printing and copying cameras
Methods
355 53, G03B 2732, G03B 2742
Patent
active
060942568
ABSTRACT:
A method for forming a critical dimension test mark, and the use of the mark to characterize and monitor imaging performance is provided. Methods in accordance with the present invention encompass an exposure of an essentially standard critical dimension bar at each of two overlapping orientations that are rotated about an axis with respect to each other. The overlapped portion forming a critical dimension test mark that is useful for enabling low cost, rapid determination of sub-micron critical dimensions for characterizing exposure tool imaging performance and in-process performance monitoring using optical measurement systems.
REFERENCES:
patent: 4386849 (1983-06-01), Haeusler et al.
patent: 4908656 (1990-03-01), Suwa et al.
patent: 4959326 (1990-09-01), Roman et al.
patent: 5111240 (1992-05-01), Boettiger
patent: 5140366 (1992-08-01), Shiozawa et al.
patent: 5247329 (1993-09-01), Oshida et al.
patent: 5262822 (1993-11-01), Kosugi et al.
patent: 5308741 (1994-05-01), Kemp
patent: 5440138 (1995-08-01), Nishi
patent: 5573634 (1996-11-01), Ham
patent: 5615006 (1997-03-01), Hirukawa et al.
patent: 5686223 (1997-11-01), Cleeves
patent: 5702868 (1997-12-01), Kellam et al.
patent: 5991006 (1999-11-01), Tsudaka
IBM.RTM. Technical Disclosure Bulletin, "Multilayer Circuit Fabrication Using Double Exposure of Positive Resist" .COPYRGT.IBM Corp. 1993, vol. 36, No. 10, Oct. 1993, pp. 423-424.
Christopher J. Progler et al., "Understanding The Effect Of Pitch On Linewidth Control," Olin Microelectronic Materials, Olin Microlithography Seminar, InterFace '96 Proceedings, pp. 141-157.
Grodnensky Ilya
Johnson Eric R.
Suwa Kyoichi
Ushida Kazuo
Metjahic Safet
Nguyen Hung Henry
Nikon Precision Inc.
LandOfFree
Method for forming a critical dimension test structure and its u does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming a critical dimension test structure and its u, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a critical dimension test structure and its u will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1340454