Method for forming a copper thin film

Details Method for forming a copper thin film Method for forming a copper thin film

2005-05-03

2005-05-03

Chen, Bret (Department: 1762)

Coating processes

Coating by vapor, gas, or smoke

Metal coating

C427S255700, C427S535000, C205S291000

Reexamination Certificate

active

06887522

ABSTRACT:
A method for forming a Cu thin film on a substrate includes a Cu-CVD step forming a first copper film on predetermined surface of a substrate by a CVD process and a plating step further forming a second copper film on the first copper film by an eletrolytic copper plating process using the first copper film as an electrode. A modifying step modifies the first copper film by exposing it in an active atmosphere between the Cu-CVD step and the plating step. Fine voids can thereby be effectively prevented from being formed in the vicinity of the interface between the first copper film and the second copper film.

REFERENCES:
patent: 6423201 (2002-07-01), Mandrekar
patent: 6482740 (2002-11-01), Soininen et al.
patent: 6485618 (2002-11-01), Gopalraja et al.
patent: 6491978 (2002-12-01), Kalyanam
patent: 6562219 (2003-05-01), Kobayashi et al.

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