Method for forming a contact plug

Details Method for forming a contact plug Method for forming a contact plug

1991-11-13

1993-05-11

Quach, T. N.

Fishing, trapping, and vermin destroying

437228, 437978, 156653, H01L 2144

Patent

active

052100545

ABSTRACT:
A method for forming a contact plug comprising steps of depositing on a semiconductor substrate provided with a base device an interlayer insulator consisting of lowermost, intermediate and uppermost layers in which the intermediate layer is less sensitive to an etchant which is capable of dissolving the lowermost layer; subjecting the resultant substrate to a thermal treatment to planarize the surface of the uppermost layer; forming a contact hole by dry-etching at an intended contact region of the interlayer insulator; subjecting the contact hole to wet-etching with an etchant which is capable of dissolving the lowermost layer of the interlayer insulator to form a stepped portion between the edges of the lowermost layer and the intermediate layer in the contact hole; and depositing a metal in the resulting contact hole to form a contact plug, thereby preventing the contact plug from peeling off the substrate.

REFERENCES:
patent: 4263603 (1981-04-01), Jillie, Jr.
patent: 4753709 (1988-06-01), Welch et al.
patent: 4824767 (1989-04-01), Chambers et al.

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