Method for forming a contact intermediate two adjacent electrica

Details Method for forming a contact intermediate two adjacent electrica Method for forming a contact intermediate two adjacent electrica

1998-06-11

2000-08-08

Niebling, John F.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438253, 438254, 438397, H01L 2120

Patent

active

061001562

ABSTRACT:
A method for forming a contact intermediate adjacent electrical components including, providing a node to which electrical connections are desired and which is located between two electrical components; providing oxidation conditions effective to grow an oxide cap on the outer portions of each of the adjacent electric components; exposing a given target area between the adjacent electrical components, the given target area being larger than what would otherwise exist if the oxide caps are not present; selectively removing material from within the target area while simultaneously protecting the adjacent electrical components from the selective removal conditions; selectively removing material from the target area thereby exposing the underlying node; and providing an electrically conductive material within the target area and which is disposed in electrical contact with the node.

REFERENCES:
patent: 5206183 (1993-04-01), Dennison
patent: 5338700 (1994-08-01), Dennison et al.
patent: 5488011 (1996-01-01), Figura et al.
patent: 5498562 (1996-03-01), Dennison et al.
patent: 5500384 (1996-03-01), Melzner
patent: 5580811 (1996-12-01), Kim
patent: 5654236 (1997-08-01), Kasai

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