Method for forming a conductive plug

Details Method for forming a conductive plug Method for forming a conductive plug

1997-12-24

1999-11-23

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438672, 438734, 438742, H01L 2100

Patent

active

059900202

ABSTRACT:
A method for forming a semiconductor device contact plug in a contact hole without a plug cavity. The method forms a contact hole on a substrate, and then forms a barrier layer in the contact hole. Next, a contact plug is formed on the barrier layer in the contact hole. After the formation of the contact plug, a portion of the barrier layer is selectively removed using a gas mixture of a first gas and a second gas. The first gas etches the barrier layer, and the second gas forms a protective layer to prevent a cavity from forming.

REFERENCES:
patent: 5827436 (1998-10-01), Kamide et al.
IEEE Transactions of Semiconductor Manufacturing, vol., 3, No. 3, Aug. 1990, Development of a Magnetron-Enhanced Plasma Process for Tungsten Etchback with Response-Surfaxe Methodology, Paul E. Riley, et al, pp. 142-144.
Mechanism of Plug Loss Suppression in Tungsten Etchback processes by a Redeposition of Titanium reaction Products, Satoru Mihara et al, Process Development Div., Fujitsu Limited, ECS Proceedings 10th Symp. Plasma Proc., vol. PV 94.20, pp. 449-459.

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