Method for forming a conductive interconnect in an integrated ci

Details Method for forming a conductive interconnect in an integrated ci Method for forming a conductive interconnect in an integrated ci

1994-02-04

1995-05-30

Quach, T. N.

Fishing, trapping, and vermin destroying

437190, 437246, 4271261, H01L 21283

Patent

active

054200725

ABSTRACT:
A conformal titanium nitride film having a preferred <111> crystal orientation is formed by chemically vapor depositing the film in two separate steps. In the first deposition step a titanium nitride layer (22) having poor step coverage and a preferred <111> crystal orientation is formed. In the second deposition step a second conformal layer of titanium nitride (24) is insitu deposited onto the first titanium nitride layer (22), wherein during the deposition the first titanium nitride layer (22) acts as a crystallographic seed layer for the second titanium nitride layer (24). As a result, a titanium nitride layer exhibiting a preferred <111> crystal orientation and good step coverage is achieved.

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