Method for forming a compound semiconductor film

Details Method for forming a compound semiconductor film Method for forming a compound semiconductor film

1983-09-16

1985-08-13

Demers, Arthur P.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

204192N, 204192SP, 204192C, 204298, 427 86, C23C 1500

Patent

active

045348405

ABSTRACT:
In the case of forming a single-layered or multilayered compound semiconductor film such as a GaAs thin film for a semiconductor laser, an EL light-emission element and the like in a molecular beam epitaxis method, a vacuum deposition method or a sputtering method, the method of the invention is to prevent the compounds from deteriorating and decomposing by making activated hydrogen coexist therein.

REFERENCES:
patent: 4321246 (1982-03-01), Sarma et al.
patent: 4362632 (1982-12-01), Jacob
patent: 4365013 (1982-12-01), Ishioka
patent: 4377628 (1983-03-01), Ishioka
Behrisch et al., Chem. Abstracts 85 (1976), #152552.
Takada et al., Chem. Abstracts 94 (1981), #148928.
Weber et al., J. Electrochem Soc., 1982, pp. 2022-2028.

Affiliated with

Also associated with

Rating

Method for forming a compound semiconductor film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a compound semiconductor film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a compound semiconductor film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2316886