Method for forming a ceramic oxide capacitor having barrier laye

Details Method for forming a ceramic oxide capacitor having barrier laye Method for forming a ceramic oxide capacitor having barrier laye

1992-02-18

1995-03-28

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437919, 437192, H01L 2170, H01L 2700

Patent

active

054016800

ABSTRACT:
An electrical ceramic oxide capacitor utilizable in an integrated circuit memory device, and a method for making same is presented. A transistor is fabricated on a semiconductor substrate according to conventional techniques. A diffusion barrier is deposited over the transistor to protect it from subsequent process steps. Metal contacts are formed to contact the active transistor regions in the substrate, and additional barriers are formed to insulate the metal contacts. In a vertical embodiment, the barriers above the metal contacts can serve as bottom electrodes for the capacitor. In a lateral embodiment, the barriers on the side of the metal contacts serve as electrodes for the capacitor. Electrical ceramic oxide material is deposited between the electrode plates.

REFERENCES:
patent: 5005102 (1991-04-01), Larson
patent: 5006481 (1991-04-01), Chan et al.
patent: 5046043 (1991-09-01), Miller et al.
patent: 5116776 (1992-05-01), Chan et al.
patent: 5119154 (1992-06-01), Gnadinger
patent: 5140389 (1992-08-01), Kimura et al.

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