Method for forming a cavity capable of accessing deep fuse struc

Details Method for forming a cavity capable of accessing deep fuse struc Method for forming a cavity capable of accessing deep fuse struc

1997-06-06

2000-04-25

Niebling, John F.

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to nonconductive state

438601, 438700, 257529, H01L 2182

Patent

active

06054340&

ABSTRACT:
A method for forming a cavity (30) to a structure such as a poly fuse (114) with a deep etch process whereby a mask is formed over the structure a first dielectric layer (23) and an etch partially through the first dielectric layer is performed. Next, a second dielectric layer (34) is deposited and a second mask is formed for completing the etch to the structure. Finally, an etch through the second dielectric (34) to an area at or near the structure is performed. A resultant device has non-etched second dielectric material on the sidewalls of the etch cavity 30.

REFERENCES:
patent: 4618878 (1986-10-01), Aoyama et al.
patent: 4977105 (1990-12-01), Okamoto et al.
patent: 5091762 (1992-02-01), Watanabe
patent: 5116776 (1992-05-01), Chan et al.
patent: 5204286 (1993-04-01), Doan
patent: 5262352 (1993-11-01), Woo et al.
patent: 5397743 (1995-03-01), Jun et al.
patent: 5439840 (1995-08-01), Jones et al.
patent: 5578517 (1996-11-01), Yoo et al.
patent: 5759906 (1998-06-01), Lou
patent: 5821160 (1998-10-01), Rodriguez et al.
patent: 5879966 (1999-03-01), Lee et al.
patent: 5891762 (1999-04-01), Sakai et al.

Affiliated with

Also associated with

Rating

Method for forming a cavity capable of accessing deep fuse struc does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a cavity capable of accessing deep fuse struc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a cavity capable of accessing deep fuse struc will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-992731