Method for forming a capacitor in a semiconductor device

Details Method for forming a capacitor in a semiconductor device Method for forming a capacitor in a semiconductor device

1995-09-06

1998-03-17

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

148DIG14, 437 47, 437 52, 437919, H01L 218242

Patent

active

057285977

ABSTRACT:
A method for forming a charge storage electrode in a semiconductor device, comprising the steps of: providing a transistor having an active region on a substrate, and forming an oxide layer on the resulting structure; providing a first conducting layer being patterned and being contacted with said active region of said transistor, wherein said first conducting layer has at least one recess on the surface thereof; forming a buried oxide layer on said recess; forming a first selective growing oxide layer only on said oxide layer; forming a second selective growing oxide layer on said first selective growing oxide layer and said buried oxide layer, exposing a portion of said first conducting layer; forming a second conducting layer on the resulting structure; patterning said second conducting layer and exposing a second selective growing oxide layer; and removing said second selective growing oxide layer, said first selective growing oxide layer, said buried oxide layer, and said oxide layer.

REFERENCES:
patent: 5389560 (1995-02-01), Park
patent: 5482886 (1996-01-01), Park et al.
patent: 5550080 (1996-08-01), Kim

Affiliated with

Also associated with

Rating

Method for forming a capacitor in a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a capacitor in a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a capacitor in a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-957084