Method for forming a capacitor in a semiconductor and a...

Details Method for forming a capacitor in a semiconductor and a... Method for forming a capacitor in a semiconductor and a...

2006-06-23

2010-06-29

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making passive device

Planar capacitor

C257SE21011, C257SE29343, C216S006000

Reexamination Certificate

active

07745300

ABSTRACT:
Disclosed is a capacitor and method for forming a capacitor in a semiconductor. The method includes the steps of: (a) forming a lower electrode pattern on a silicon semiconductor substrate; (b) etching a portion of the lower electrode pattern to a predetermined depth to form a step in the lower electrode pattern; (c) forming a dielectric layer and a upper electrode layer on an entire surface of the substrate including the lower electrode pattern; and (e) patterning the upper electrode layer and the dielectric layer to form a upper electrode pattern and a dielectric pattern.

REFERENCES:
patent: 5814526 (1998-09-01), Tseng
patent: 6333224 (2001-12-01), Lee
patent: 6492224 (2002-12-01), Jao
patent: 2001/0022292 (2001-09-01), Hartner et al.

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