Method for forming a capacitor in a DRAM cell using a rough over

Details Method for forming a capacitor in a DRAM cell using a rough over Method for forming a capacitor in a DRAM cell using a rough over

1994-03-18

1995-06-27

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437233, 437919, 437977, 148DIG14, 148DIG138, H01L 2170, H01L 21469

Patent

active

054279747

ABSTRACT:
In accordance with the invention a rough overlayer, e.g., a tungsten film, is used to define a plurality of pillars in a polysilicon electrode layer. This increases the surface area of the polysilicon electrode and thus increases capacitance of a capacitor incorporating the electrode layer in a DRAM cell.

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