Semiconductor device manufacturing: process – Making passive device
Reexamination Certificate
2007-04-06
2009-10-20
Tran, Long K (Department: 2818)
Semiconductor device manufacturing: process
Making passive device
C438S250000, C257SE21011, C257SE21012, C257SE21021, C361S306300, C361S322000
Reexamination Certificate
active
07605048
ABSTRACT:
High capacitance value capacitors are formed using bimetal foils of an aluminum layer attached to a copper layer. The copper side of a bimetallic copper/aluminum foil or a monometallic aluminum foil is temporarily protected using aluminum or other materials, to form a sandwich. The exposed aluminum is treated to increase the surface area of the aluminum by at least one order of magnitude, while not attacking any portion of the protected metal. When the sandwich is separated, the treated bimetal foil is formed into a capacitor, where the copper layer is one electrode of the capacitor and the treated aluminum layer is in intimate contact with a dielectric layer of the capacitor.
REFERENCES:
patent: 4482931 (1984-11-01), Yializis
patent: 6187061 (2001-02-01), Amatucci et al.
patent: 6346335 (2002-02-01), Chen et al.
patent: 6534133 (2003-03-01), Kaloyeros et al.
patent: 6540900 (2003-04-01), Kinard et al.
patent: 6605314 (2003-08-01), Lessner et al.
patent: 6744621 (2004-06-01), Lessner et al.
patent: 6808615 (2004-10-01), Lessner et al.
patent: 6839219 (2005-01-01), Mashiko et al.
patent: 6882544 (2005-04-01), Nakamura et al.
patent: 7361568 (2008-04-01), Dunn et al.
patent: 2004/0256731 (2004-12-01), Mao et al.
patent: 2005/0150596 (2005-07-01), Vargo et al.
patent: 2005/0217893 (2005-10-01), Noguchi et al.
patent: 2006/0120014 (2006-06-01), Nakamura et al.
patent: 2006091462 (2006-08-01), None
PCT International Search Report, PCT Appl. PCT/US2008/058555, Sep. 10, 2008.
Dunn Gregory J.
Harrington Albert K.
Lessner Philip M.
Savic Jovica
Hardaway, III John B.
Kemet Electronics Corporation
Motorola Inc.
Nexsen Pruet , LLC
Tran Long K
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