Method for forming a buried contact in a semiconductor device

Details Method for forming a buried contact in a semiconductor device Method for forming a buried contact in a semiconductor device

1991-02-04

1992-11-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437193, 437200, H01L 2144, H01L 2148

Patent

active

051622599

ABSTRACT:
A process for forming a buried contact (50) in a semiconductor device (20) which avoids etch damage to the substrate and forms a self-aligned, low resistance contact to a silicon substrate (22) is provided. After forming a contact opening (32) through overlying insulating and conducting layers (24, 28,30), a silicide region (40) is formed in the substrate at the contact surface (34) exposed by the contact opening (32). A refractory metal silicide which provides high etching selectivity to polysilicon is formed in the substrate at the contact surface (34) by either a blanket deposition of a refractory metal into the contact opening (32), or alternatively, by a selective deposition process using contact surface (34) as a nucleation site. In a preferred embodiment, a cobalt or tantalum silicide region (40) is formed in the substrate at the contact surface (34) and a conductive layer (42) is deposited and etched to form an interconnect (48) contacting the silicide region (40). The high etching selectivity obtainable between the conductive layer ( 42) and the silicide region (40) avoids damage to the substrate surface providing improved device performance.

REFERENCES:
patent: 4289574 (1981-09-01), Radigan et al.
patent: 4551908 (1985-11-01), Nagasawa et al.
patent: 4966864 (1990-10-01), Pfiester
patent: 4992394 (1991-02-01), Kostelak, Jr. et al.

Affiliated with

Also associated with

Rating

Method for forming a buried contact in a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for forming a buried contact in a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a buried contact in a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2292264