Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2007-10-30
2009-08-25
Clark, Jasmine J (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S737000, C257S773000, C257SE23021, C257SE23069
Reexamination Certificate
active
07579692
ABSTRACT:
A method for forming a bump includes the steps of forming a resist layer so that a through-hole formed therein is located on a pad; and forming a metal layer to be electrically connected to the pad conforming to the shape of the through-hole. The metal layer is formed so as to have a shape in which is formed a region for receiving a soldering or brazing material.
REFERENCES:
patent: 4205099 (1980-05-01), Jones et al.
patent: 4935803 (1990-06-01), Kalfus et al.
patent: 5130275 (1992-07-01), Dion
patent: 5310699 (1994-05-01), Chikawa et al.
patent: 5329423 (1994-07-01), Scholz
patent: 5349495 (1994-09-01), Visel et al.
patent: 5477086 (1995-12-01), Rostoker et al.
patent: 5600180 (1997-02-01), Kusaka et al.
patent: 5965943 (1999-10-01), Mizuta
patent: 6093964 (2000-07-01), Saitoh
patent: 6130148 (2000-10-01), Earnworth et al.
patent: 6191023 (2001-02-01), Chen
patent: 6218281 (2001-04-01), Watanabe et al.
patent: 6414849 (2002-07-01), Chiu
patent: 6525422 (2003-02-01), Ono et al.
patent: 6570251 (2003-05-01), Akram et al.
patent: 6612024 (2003-09-01), Sasaki et al.
patent: 7355280 (2008-04-01), Matsushima et al.
patent: 0 766 310 (1997-02-01), None
patent: 58-51512 (1983-03-01), None
patent: 60-031245 (1985-02-01), None
patent: 01-191451 (1989-08-01), None
patent: 05-013418 (1993-01-01), None
patent: 05-335315 (1993-12-01), None
patent: 6-140409 (1994-05-01), None
patent: 07-066207 (1995-03-01), None
patent: 09-017795 (1997-01-01), None
patent: 9-97791 (1997-04-01), None
patent: 10-50708 (1998-02-01), None
Communication from Chinese Patent Office re: counterpart application.
Communication from Japanese Patent Office re: counterpart application.
Makabe Akira
Matsushima Fumiaki
Ota Tsutomu
Clark Jasmine J
Harness & Dickey & Pierce P.L.C.
Seiko Epson Corporation
LandOfFree
Method for forming a bump, semiconductor device and method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming a bump, semiconductor device and method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a bump, semiconductor device and method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4081610