Method for forming a bump electrode for a semiconductor device

Fishing – trapping – and vermin destroying

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437190, 437203, 437228, 437231, 437977, 148DIG131, 148138, H01L 2160

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051089505

ABSTRACT:
A bump electrode structure of a semiconductor device comprises an electrode pad formed of an aluminum alloy, an insulating oxide layer covering only the peripheral edge portion of the electrode pad, an under-bump layer formed of an alloy of titanium and tungsten, and a bump electrode formed of gold. The titanium-tungsten alloy functions both as a barrier metal and as a bonding metal. The bump electrode rises substantially straight from the bonding surface of the under-bump layer, and its top portion has an area only substantially equal to that of the electrode pad. Fine V-shaped grooves are formed on the top surface of the bump electrode by anisotropic etching. Thus, the semiconductor device with fine electrode pad pitches is provided with a high-reliability bump electrode structure which ensures sufficient bonding strength between internal and external electrodes.

REFERENCES:
patent: 3689991 (1972-09-01), Aird
patent: 4293637 (1981-10-01), Hatada et al.
patent: 4742023 (1988-05-01), Hasegawa
patent: 4782380 (1988-11-01), Shankar et al.
patent: 4816424 (1989-03-01), Watanabe et al.
Ghandhi, "VLSI Fabrication Principles", 1983, pp. 475-517.

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