Method for forming a bottom gate thin film transistor using...

Semiconductor device manufacturing: process – Having organic semiconductive component

Reexamination Certificate

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C257SE51005

Reexamination Certificate

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10876229

ABSTRACT:
An improved method of forming a semiconducting polymer layer protected by an insulating polymer layer is described. In the method, a material for forming a semiconducting polymer and an insulating polymer are dissolved in a solvent. The blended solution is deposited on a substrate where the semiconducting polymer and insulating polymer segregate. Upon evaporation of the solvent, the semiconducting material forms the active region of a TFT and the insulating polymer minimizes the exposure of the semiconducting polymer to air.

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Chua, L., Ho, Peter, Sirringhaus, H., Friend, R.: Observation of Field-Effect Transistor Behavior at Self-Organized Interfaces, Advanced Materials, Sep. 16, 2004, pp. 1609-1615, vol. 16, No. 18.

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