Method for forming a bipolar transistor using doped SOG

Details Method for forming a bipolar transistor using doped SOG Method for forming a bipolar transistor using doped SOG

1992-10-23

1994-08-23

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437151, 437152, 437174, 437231, 437228, H01L 21265

Patent

active

053407520

ABSTRACT:
A method for forming a bipolar transistor which employs a single drive-in step to form an emitter and a base. A layer of SOG containing a plurality of dopants is spun onto a collector, typically silicon. The dopants are driven into the collector to form the base and emitter. The method employs diffusion instead of implanting to form shallow and abrupt junctions without damage to the crystal lattice of the silicon.

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