Method for forming a bipolar junction transistor

Details Method for forming a bipolar junction transistor Method for forming a bipolar junction transistor

1998-07-06

1999-02-09

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

438365, 438350, H01L 21331

Patent

active

058693807

ABSTRACT:
A bipolar junction transistor structure and method of forming the bipolar junction transistor structure comprising an intrinsic base surrounded by a base link and an extrinsic base surrounding the base link. An emitter is formed above the base. The extrinsic base, base link, and intrinsic base are formed using ion implantation. A single layer of doped polysilicon is used to provide the doping source for the emitter and a collector contact. Silicide contacts to the emitter, collector, or base are not required or used.

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