Method for forming a Bi-containing superconducting oxide film on

Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k

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Details

505730, 505731, 505732, 427 62, 4274192, 4274193, B05D 512

Patent

active

052602672

ABSTRACT:
A superconducting thin film of Bi-containing compound oxide deposited on a substrate, a buffer layer made of Bi.sub.2 O.sub.3 being interposed between the superconducting thin film and the substrate.

REFERENCES:
patent: 5116811 (1992-05-01), Abe et al.
patent: 5158931 (1992-10-01), Noda et al.

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